On the transient photoconductive decay technique for lifetime extraction in HgCdTe

Abstract

The minority carrier lifetime of HgCdTe is studied using the photoconductive decay technique. The focus of this paper is to examine the various methods of extracting minority carrier lifetime and/or surface recombination parameters from photoconductive decay data, with particular reference to HgCdTe. It is shown that none of the current models unambiguously explain experimental results and that detailed lifetime extraction by photoconductive decay is still not a quantitative technique.