{"title":"Agilent HBT model extraction and circuit verification for InGaP/GaAs HBT","authors":"Jian Han, Lingling Sun, Jun Liu, J. Wen","doi":"10.1109/ICCT.2008.4716253","DOIUrl":null,"url":null,"abstract":"Agilent HBT model parameters are extracted from the multi-finger InGaP/ GaAs HBT fabricated in 2 um process. Comparison has been made between measured and simulated data for verification purpose. With frequency range from DC to 20.05 GHz, this model is suitable for simulating InGaP/ GaAs HBT AC small -signal characterization. Using this model to verify a broadband amplifier, the result shows good agreement between simulated and measured data.","PeriodicalId":259577,"journal":{"name":"2008 11th IEEE International Conference on Communication Technology","volume":"218 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 11th IEEE International Conference on Communication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCT.2008.4716253","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Agilent HBT model parameters are extracted from the multi-finger InGaP/ GaAs HBT fabricated in 2 um process. Comparison has been made between measured and simulated data for verification purpose. With frequency range from DC to 20.05 GHz, this model is suitable for simulating InGaP/ GaAs HBT AC small -signal characterization. Using this model to verify a broadband amplifier, the result shows good agreement between simulated and measured data.