A cmos rf bandpass low noise amplifier for multi-band wireless communication applications

Abstract

A new multi-band bandpass low noise amplifier was designed based on Charted Semiconductor Manufacturing (CSMj 0.25 m CMOS technology. The LN.4 is capable of a simultaneous operation at three different frequency bands: 900MHz-980MHz, 1.8GHz2.5GHz and SGHZ-~GHZ, with the corresponding peak gains to each band of 28.2dB, 25dB and 23.7dB respectively. The operating frequency range of this LNA covers almost all of the working bands of modem popular mobile/wireless communications, such as GSM900/1800, PCSIPHS, DECT, IMT-2000, the thirdgeneration (3Gj mobile communication, the Bluetooth, HiperLAN and some other bands indicated in IEEE 802.11a and 802.llb&n1dards. The LNA also has the noise figure of no more than 5dE3 and the power consumption of 43mW at a low voltage supply of 1.5V. This design brings great convenience for modem multistandard mobile/wireless . communications and the