Sensitivity to NH3 of SnO2 thin films prepared by magnetron sputtering

O. V. Anisimov, N. Maksimova, E. Chernikov, E. Y. Sevastyanov, N. Sergeychenko
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引用次数: 5

Abstract

SnO2 thin film sensor was fabricated with microelectronic technology and NH3 (ammonia) gas sensing characteristics were measured in a temperature range 200–375 °C. It was observed that surface doping with platinum improves significantly the material's sensitivity to ammonia, and the optimal operational temperature of the sensor was 325 °C. The sensor showed high sensitivity to low NH3 concentration in the range 20–350 ppm with relatively fast response (10 s) and recovery times (30 s), respectively.
磁控溅射法制备SnO2薄膜对NH3的敏感性
采用微电子技术制备了SnO2薄膜传感器,在200 ~ 375℃的温度范围内测量了其NH3(氨)气敏特性。结果表明,表面掺杂铂显著提高了材料对氨的灵敏度,传感器的最佳工作温度为325℃。该传感器对20 ~ 350 ppm范围内的低NH3浓度具有较高的灵敏度,响应速度较快(10 s),恢复时间较快(30 s)。
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