Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate

Abstract

We carried out Monte Carlo (MC) simulation of In_0.52Al_0.48As/In_0.53Ga_0.47As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMT with a “realistic” buried gate in which the tip of gate foot is “round.” We found that the “effective” gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field in the channel layer. Furthermore, the “round” tip of gate electrode is convenient to prevent breakdown.