Characteristics of PAALD-TaN thin films derived from TAIMATA precursor for copper metallization

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345665

Jong Won Hong, K. Choi, You Kyoung Lee, Sung Gun Park, Sang woo Lee, Jong Myeong Lee, S. Kang, G. Choi, Sung Tae Kim, U. Chung, J. Moon

{"title":"Characteristics of PAALD-TaN thin films derived from TAIMATA precursor for copper metallization","authors":"Jong Won Hong, K. Choi, You Kyoung Lee, Sung Gun Park, Sang woo Lee, Jong Myeong Lee, S. Kang, G. Choi, Sung Tae Kim, U. Chung, J. Moon","doi":"10.1109/IITC.2004.1345665","DOIUrl":null,"url":null,"abstract":"PAALD (plasma assisted atomic layer deposition)-TaN thin films derived from a precursor, tert-amylimidotrisdim-ethylamidotantalum (TAIMATA), for the diffusion barrier in Cu interconnects were developed and compared to the thermal ALD-TaN. The deposition rate of the PAALD-TaN process was around /spl sim/0.9 /spl Aring//cycle at 250 /spl deg/C. The resistivity of TaN film by the PAALD was /spl sim/ 366 /spl mu/ohm-cm, while the resistivity by the thermal ALD was not measurable. The PAALD-TaN and thermal ALD-TaN film appeared to have cubic and amorphous phase, respectively. In Cu metallization, as TaN thickness increased, via resistance with thermal ALD-TaN increased dramatically, but via resistance with PAALD-TaN was almost constant and much lower than that with thermal ALD-TaN. Using PAALD-TaN, the diffusion barrier characteristics was also improved in comparison to thermal ALD-TaN.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345665","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

PAALD (plasma assisted atomic layer deposition)-TaN thin films derived from a precursor, tert-amylimidotrisdim-ethylamidotantalum (TAIMATA), for the diffusion barrier in Cu interconnects were developed and compared to the thermal ALD-TaN. The deposition rate of the PAALD-TaN process was around /spl sim/0.9 /spl Aring//cycle at 250 /spl deg/C. The resistivity of TaN film by the PAALD was /spl sim/ 366 /spl mu/ohm-cm, while the resistivity by the thermal ALD was not measurable. The PAALD-TaN and thermal ALD-TaN film appeared to have cubic and amorphous phase, respectively. In Cu metallization, as TaN thickness increased, via resistance with thermal ALD-TaN increased dramatically, but via resistance with PAALD-TaN was almost constant and much lower than that with thermal ALD-TaN. Using PAALD-TaN, the diffusion barrier characteristics was also improved in comparison to thermal ALD-TaN.

查看原文本刊更多论文

铜金属化用TAIMATA前驱体制备的PAALD-TaN薄膜的特性

研究人员开发了用于Cu互连扩散势垒的PAALD(等离子辅助原子层沉积)-TaN薄膜，该薄膜由一种前驱体tert-amylimidotrisdim-乙基lamido钽(TAIMATA)制成，并与热ALD-TaN进行了比较。在250 /spl℃下，paad - tan沉积速率约为/spl sim/0.9 /spl Aring//cycle。PAALD法测得TaN膜的电阻率为/spl sim/ 366 /spl mu/欧姆-cm，而热ALD法测不到TaN膜的电阻率。热ALD-TaN膜和ALD-TaN膜分别具有立方相和非晶相。在Cu金属化过程中，随着TaN厚度的增加，热ALD-TaN的通孔电阻急剧增加，而热ALD-TaN的通孔电阻几乎不变，且远低于热ALD-TaN。与热ALD-TaN相比，PAALD-TaN的扩散势垒特性也得到了改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

自引率

0.00%

发文量