Analysis of factors affecting the accuracy of the measurement of resistance in a charge balancing circuit

J. Gronczynski, J. Mroczka
{"title":"Analysis of factors affecting the accuracy of the measurement of resistance in a charge balancing circuit","authors":"J. Gronczynski, J. Mroczka","doi":"10.1117/12.435918","DOIUrl":null,"url":null,"abstract":"This article presents results of a theoretical and simulating analysis of the accuracy of the method of the direct measurement of resistance using a charge balancing circuit and the 'autozero' method. Achieved results showed that those construction makes it possible to reduce a majority of factors that could be sources of measurement errors, however an extent of the reduction first of all depends on parameters of the used semiconductor switches. The influence of finite values of on-state resistances and switching times on a linearity and monotonicity of the conversion characteristic were analyzed in the paper. Results of simulations have been based on parameters of contemporary MOSFET transistors that can be used to switch currents in the circuit.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optoelectronic and Electronic Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.435918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This article presents results of a theoretical and simulating analysis of the accuracy of the method of the direct measurement of resistance using a charge balancing circuit and the 'autozero' method. Achieved results showed that those construction makes it possible to reduce a majority of factors that could be sources of measurement errors, however an extent of the reduction first of all depends on parameters of the used semiconductor switches. The influence of finite values of on-state resistances and switching times on a linearity and monotonicity of the conversion characteristic were analyzed in the paper. Results of simulations have been based on parameters of contemporary MOSFET transistors that can be used to switch currents in the circuit.
影响电荷平衡电路电阻测量精度的因素分析
本文对采用电荷平衡电路和自动归零法直接测量电阻的精度进行了理论和仿真分析。取得的结果表明,这些结构可以减少大多数可能成为测量误差来源的因素,但是减少的程度首先取决于所用半导体开关的参数。分析了导通电阻和开关次数的有限值对转换特性的线性和单调性的影响。仿真结果基于可用于电路中开关电流的当代MOSFET晶体管的参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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