{"title":"Analysis of factors affecting the accuracy of the measurement of resistance in a charge balancing circuit","authors":"J. Gronczynski, J. Mroczka","doi":"10.1117/12.435918","DOIUrl":null,"url":null,"abstract":"This article presents results of a theoretical and simulating analysis of the accuracy of the method of the direct measurement of resistance using a charge balancing circuit and the 'autozero' method. Achieved results showed that those construction makes it possible to reduce a majority of factors that could be sources of measurement errors, however an extent of the reduction first of all depends on parameters of the used semiconductor switches. The influence of finite values of on-state resistances and switching times on a linearity and monotonicity of the conversion characteristic were analyzed in the paper. Results of simulations have been based on parameters of contemporary MOSFET transistors that can be used to switch currents in the circuit.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optoelectronic and Electronic Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.435918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This article presents results of a theoretical and simulating analysis of the accuracy of the method of the direct measurement of resistance using a charge balancing circuit and the 'autozero' method. Achieved results showed that those construction makes it possible to reduce a majority of factors that could be sources of measurement errors, however an extent of the reduction first of all depends on parameters of the used semiconductor switches. The influence of finite values of on-state resistances and switching times on a linearity and monotonicity of the conversion characteristic were analyzed in the paper. Results of simulations have been based on parameters of contemporary MOSFET transistors that can be used to switch currents in the circuit.