{"title":"Benefits of heat-assist for laser annealing","authors":"K. Shibahara","doi":"10.1109/IWJT.2005.203880","DOIUrl":null,"url":null,"abstract":"In this paper, a new scheme for laser annealing named partial-melt laser annealing (PMLA) is proposed based on the knowledges obtained with heat-assisted laser annealing (HALA) investigation. Its feasibility for 10 nm junction was demonstrated. The obtained sheet resistance indicated sufficient dopant activation by this method.","PeriodicalId":307038,"journal":{"name":"Extended Abstracts of the Fifth International Workshop on Junction Technology","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Fifth International Workshop on Junction Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2005.203880","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a new scheme for laser annealing named partial-melt laser annealing (PMLA) is proposed based on the knowledges obtained with heat-assisted laser annealing (HALA) investigation. Its feasibility for 10 nm junction was demonstrated. The obtained sheet resistance indicated sufficient dopant activation by this method.