Influence of Pressure on TCR of Polysilicon Piezoresistive Sensor

Abstract

Temperature based pressure sensor is much needed to be used in hot environment but many of the electronic devices have little tolerance for heat. However, high temperature transducers can be a best solution for compensating heat problem on the performance of sensor. In this paper, two different design modelling has been taken into consideration: the first one is membrane and another one is diaphragm. The effect of temperature on the sensitivity of both the pressure sensor has been optimized through finite element analysis. Both the sensors have been subjected to external pressure ranges from 10 to 40 psi. The sensitivity is found to be ~0.526mv/psi in case of membrane; while in case of diaphragm, it is ~1.00mv/psi. The change in resistance for membrane varies linearly with respect to temperature and pressure; while change in resistance is altered in case of diaphragm. The TCR value of diaphragm and membrane was found to be ~5.76×10−3 (ºC)−land ~4.46×10−3 (ºC)−1.