Chemical Bath Deposition as a Simple Way to Grow Isolated and Coalesced ZnO Nanorods for Light-Emitting Diodes Fabrication

M. Mosca, I. Crupi, D. Russotto, G. Lullo, R. Macaluso, Giuseppe Costantino Giaconia, S. Mirabella, E. Feltin
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引用次数: 2

Abstract

A way to grow and characterize isolated and coalesced ZnO nanorods on $p$-GaN/sapphire structure is presented. Chemical bath deposition can be used to grow ZnO nanorods of device-quality, simply controlling the duration time of the growth process and the concentration of the nutrient solution in the bath. Increasing the duration of the process, as well as the concentration of the solution, leads to compact and sound layers instead of separated nanorods. However, too high concentrations stop the growth process. Light-emitting diodes fabricated on these ZnO-p-GaN heterostructure have a peak of electroluminescence at 400 nm and exhibit interesting electrical and optical properties. Optical power of 225 µW at 0.425 $A$/cm2and a related wall-plug efficiency of 0.23% are obtained with 2 mm-diameter LEDs fabricated on a ZnO layer grown for 30 h in a solution of concentration 70 mM. The performances shown by these LEDs can be used as a way to test the quality of the ZnO growth.
化学浴沉积是一种生长分离和聚结ZnO纳米棒的简单方法,用于制造发光二极管
提出了一种在$p$-GaN/蓝宝石结构上生长和表征分离和聚结ZnO纳米棒的方法。化学浴沉积可以用来生长具有器件质量的ZnO纳米棒,只需控制生长过程的持续时间和浴槽中营养液的浓度即可。增加这一过程的持续时间,以及溶液的浓度,就会产生致密而健全的层,而不是分离的纳米棒。然而,浓度过高会阻碍生长过程。在这些ZnO-p-GaN异质结构上制备的发光二极管在400 nm处具有电致发光峰,并表现出有趣的电学和光学特性。在浓度为70 mM的溶液中,在ZnO层上生长30 h,制备的直径为2mm的led光功率为225µW,光功率为0.425 $A$/cm2, wall-plug效率为0.23%。这些led所显示的性能可以用来测试ZnO生长的质量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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