Stripe-teeth metamaterial Al- and Nb-based rectennas (Presentation Recording)

R. Osgood, S. Giardini, J. Carlson, Prabhuram Joghee, R. O'Hayre, K. Diest, M. Rothschild
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Abstract

Unlike a semiconductor, where the absorption is limited by the band gap, a “microrectenna array” could theoretically very efficiently rectify any desired portion of the infrared frequency spectrum (25 - 400 THz). We investigated vertical metal-insulator-metal (MIM) diodes that rectify vertical high-frequency fields produced by a metamaterial planar stripe-teeth Al or Au array (above the diodes), similar to stripe arrays that have demonstrated near-perfect absorption in the infrared due to critical coupling [1]. Using our design rules that maximize asymmetry (and therefore the component of the electric field pointed into the substrate, analogous to Second Harmonic Generation), we designed, fabricated, and analyzed these metamaterial-based microrectenna arrays. NbOx and Al2O3 were produced by anodization and ALD, respectively. Smaller visible-light Pt-NbOx-Nb rectennas have produced output power when illuminated by visible (514 nm) light [2]. The resonances of these new Au/NbOx/Nb and Al/Al2O3/Al microrectenna arrays, with larger dimensions and more complex nanostructures than in Ref. 1, were characterized by microscopic FTIR microscopy and agreed well with FDTD models, once the experimental refractive index values were entered into the model. Current-voltage measurements were carried out, showed that the Al/Al2O3/Al diodes have very large barrier heights and breakdown voltages, and were compared to our model of the MIM diode. We calculate expected THz-rectification using classical [3] and quantum [4] rectification models, and compare to measurements of direct current output, under infrared illumination. [1] C. Wu, et. al., Phys. Rev. B 84 (2011) 075102. [2] R. M. Osgood III, et. al., Proc. SPIE 8096, 809610 (2011). [3] A. Sanchez, et. al., J. Appl. Phys. 49 (1978) 5270. [4] J. R. Tucker and M. J. Feldman, Rev. of Mod. Phys. 57, (1985)1055.
条纹齿状超材料铝基和铌基天线(演示记录)
与半导体不同,半导体的吸收受到带隙的限制,“微整流天线阵列”理论上可以非常有效地纠正红外频谱(25 - 400太赫兹)的任何期望部分。我们研究了垂直金属-绝缘体-金属(MIM)二极管,该二极管校正由超材料平面条纹齿Al或Au阵列(在二极管上方)产生的垂直高频场,类似于由于临界耦合而在红外中表现出近乎完美吸收的条纹阵列[1]。利用我们最大化不对称的设计规则(因此电场的分量指向衬底,类似于二次谐波产生),我们设计,制造和分析了这些基于超材料的微整流天线阵列。通过阳极氧化和ALD分别制备NbOx和Al2O3。较小的可见光Pt-NbOx-Nb天线在可见光(514 nm)照射下产生输出功率[2]。与文献1相比,这些新的Au/NbOx/Nb和Al/Al2O3/Al微整流天线阵列具有更大的尺寸和更复杂的纳米结构,通过微观FTIR显微镜对其进行了表征,并将实验折射率值输入到模型中,与FDTD模型很好地吻合。电流电压测量表明,Al/Al2O3/Al二极管具有非常大的势垒高度和击穿电压,并与我们的模型MIM二极管进行了比较。我们使用经典[3]和量子[4]整流模型计算了期望的太赫兹整流,并与红外照明下的直流输出测量结果进行了比较。[1]吴志强,等。Rev. B 84(2011) 075102。[2]王晓明,王晓明,等。基于gis的数据采集技术研究进展。[3]李建平,李建平。物理学报49(1978)5270。[4]刘志强,刘志强,刘志强,等。现代物理学报,2004,(3):555 - 555。
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