25 nm Planar Bulk SONOS-type Memory with Double Tunnel Junction

Abstract

25nm gate length bulk-planar SONOS-type memory, which has Si nanocrystalline layer between double tunnel oxides, shows excellent memory characteristics due to Coulomb blockade and quantum confinement in Si nanocrystals. A direct evidence of great advantage in trade-off between charge retention and w/e speed is shown experimentally, and it is shown that further device scaling and improvement are possible by Si nanocrystal size scaling. Double tunnel junction SONOS-type memory is a strong candidate in less than 25nm region