Anisotropic two-dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on vicinal substrates

Abstract

In this work, we present results of a magneto-transport study of two-dimensional electron gas transport in N-polar GaN/AlGaN heterostuctures grown on misoriented sapphire substrates. It is shown that the multi-atomic “steps” resulting from epitaxial growth on misoriented substrates leads to significantly lower average two-dimensional electron gas (2DEG) mobility in the direction perpendicular to the interfacial steps which is accompanied by significant broadening of the 2DEG mobility distribution.