Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO3 thin films

Ho Won Jang, S. Baek, D. Ortiz, C. M. Folkman, R. Das, Y. Chu, J. Zhang, V. Vaithyanathan, S. Choudhury, Y. Chen, X. Pan, D. Schlom, L. Chen, R. Ramesh, C. Eom
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Abstract

We report the strain dependence of remanent polarization and coercive field of epitaxial (001)p BiFeO3 films. Our measurements reveal that the large spontanoues polarization of BiFeO3 is indeed intrinsic, the remanent polarization of (001)p BiFeO3 thin films has a strong strain dependence, even stronger than (001) PbTiO3 films, and the coercive field of BiFeO3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001)p BiFeO3 membranes allows us to achieve a fatigue-free switching behavior to 1010 cycles. This experimental result strongly suggests that epitaxial (001)p BiFeO3 thin films are very promising materials for non-volatile memories and magnetoelectric devices.
外延(001)BiFeO3薄膜自发极化的应变可调性和铁电性能的增强
本文报道了外延(001)p BiFeO3薄膜的剩余极化和矫顽场的应变依赖关系。我们的测量结果表明,BiFeO3的大自发极化确实是固有的,(001)p BiFeO3薄膜的剩余极化具有很强的应变依赖性,甚至比(001)PbTiO3薄膜更强,并且BiFeO3薄膜的矫顽场也是可调的。此外,低矫顽力场和(001)p BiFeO3膜中减少的泄漏电流使我们能够实现1010次循环的无疲劳开关行为。这一实验结果有力地表明,外延(001)p BiFeO3薄膜是一种非常有前途的非易失性存储器和磁电器件材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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