A Non-Oxide 850 nm VCSEL for High-Speed Datacom Applications

OFC/NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference Pub Date : 2007-03-25 DOI:10.1109/OFC.2007.4348583

M. Ayliffe, M. Cheng, L. Chirovsky, C. Ciesla, S. Demars, C. Hart, G. Hasnain, W. Hogan, S. Hu, K. Jackson, W. Jiang, D. Lewis, M. Murty, C. Shieh, D. Sun, I.-H. Tan, D. Venables

引用次数: 1

Abstract

We have developed an 850 nm VCSEL where current and photon confinement is achieved by a mesa structure without lateral oxidation. The VCSEL performance and reliability is discussed in the context of 4xFC and 10 GbE applications.

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用于高速数据通信应用的非氧化物850纳米VCSEL

我们开发了一个850 nm的VCSEL，其中电流和光子的限制是通过一个没有横向氧化的台面结构来实现的。在4xFC和10gbe应用的背景下讨论了VCSEL的性能和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

OFC/NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference

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