T. Ohguro, R. Hasumi, T. Ishikawa, M. Nishigori, H. Oyamatsu, F. Matsuoka
{"title":"An epitaxial channel MOSFET for improving flicker noise under low supply voltage","authors":"T. Ohguro, R. Hasumi, T. Ishikawa, M. Nishigori, H. Oyamatsu, F. Matsuoka","doi":"10.1109/VLSIT.2000.852809","DOIUrl":null,"url":null,"abstract":"We investigated the analog performance of a 0.11 /spl mu/m CMOS under a low supply voltage. In order to avoid flicker noise degradation under the low supply voltage, an epitaxial channel MOSFET without halo implantation was shown to be effective.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852809","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
We investigated the analog performance of a 0.11 /spl mu/m CMOS under a low supply voltage. In order to avoid flicker noise degradation under the low supply voltage, an epitaxial channel MOSFET without halo implantation was shown to be effective.