Passive MESFET Limiters For Wireless Applications

C.E. Buchinsky, A. Katz
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引用次数: 1

Abstract

The ability to sharply limit power level while maintaining a negligible change in phase is important in many wireless communications systems. This paper investigates the use of a passive MESFET device as a power limiter for the UHF and lower microwave frequency range. The S-parameters of a commercial grade GaAs FET were measured as a function of power level and used to develop a model. From the model a limiter circuit was designed, fabricated and tested. The resulting limiter employed two FETs in cascade, and produced a near ideal transfer characteristic over more than a two decade power range with less than a 15 degree change in phase.
用于无线应用的无源MESFET限制器
在许多无线通信系统中,在保持可忽略不计的相位变化的同时大幅限制功率水平的能力是重要的。本文研究了无源MESFET器件在超高频和低微波频率范围内作为功率限制器的应用。测量了商用级GaAs场效应管的s参数作为功率电平的函数,并用于开发模型。在此基础上设计、制作并测试了一种限幅器电路。所得到的限幅器采用两个fet级联,在超过20年的功率范围内产生了接近理想的传输特性,相位变化小于15度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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