An 8×8 Switch Matrix MMIC Integrating Eight InP-HEMT SP8T Switches for 10-Gbit/s Systems

H. Kamitsuna, Y. Yamane, M. Tokumitsu, H. Sugahara, T. Enoki
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Abstract

An 8times8 switch matrix MMIC using cold-FET SP8T switches is presented. InP HEMTs with a low RonmiddotCoff product enable us to construct a dc-to-over-10-GHz SP8T switch in a series configuration. The multilayer interconnection with top-metal- and dielectric-layer thickness of 5 mum allows us to configure interconnection transmission lines quite compactly, which is essential for wideband operation. The switch matrix IC using these technologies with a novel size-reduction technique is as small as 0.4 mm2 (core area) and achieves low insertion loss (<3.9 dB) and high isolation (>26.5 dB) below 10 GHz. We confirmed error-free operation up to 12.5 Gbit/s with good eye openings even when eight data signals are simultaneously input to the switch IC
用于10gbit /s系统的集成8个InP-HEMT SP8T交换机的8×8开关矩阵MMIC
提出了一种使用冷场效应管SP8T开关的8倍8开关矩阵MMIC。具有低RonmiddotCoff产品的InP hemt使我们能够在串联配置中构建dc到超过10 ghz的SP8T交换机。顶层金属层和介电层厚度为5微米的多层互连使我们可以非常紧凑地配置互连传输线,这是宽带运行所必需的。采用这些技术的开关矩阵IC采用了一种新颖的尺寸减小技术,其核心面积仅为0.4 mm2,并且在10 GHz以下实现了低插入损耗(26.5 dB)。我们证实,即使同时向交换机IC输入8个数据信号,也可以在12.5 Gbit/s的速度下无错误运行,并且眼睛张开良好
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