A Novel High-Density Single-Event Upset Hardened Configurable SRAM Applied to FPGA

Abstract

This paper has investigated present radiation hardened FPGA manufacturers and SEU hardened method of configurable SRAM (CSRAM) applied to FPGA. A novel high-density single-event upset hardened CSRAM applied to BQV 300 FPGA is proposed, and this paper uses the mix-mode radiation hardened verification method to simulate the SEU hardened CSRAM. The proposed SEU-hardened CSRAM applied to FPGAs is SEU immune up to 22.49 MeVŸcm2/mg, under the angle for incident ion of 0°. But the area of proposed CSRAM only increases 12% than traditional 6-T SRAM, and the area of DICE will increase 69% than proposed CSRAM. Using the proposed CSRAM makes BQV 300 FPGA able to be fabricated. The SEU LETth is much higher than SEU LETth of CSRAM for Xilinx’s FPGA.