Optimization of Surface Preparation and Surface Passivation for GaSb Infrared Photodetectors

Abstract

GaSb can be used as an efficient mid-wavelength infrared photodetector, so its improvement is an important field of study. The passivation of GaSb is not as effective as passivation of other semiconductors. We report on the use of surface treatments of Buffered Oxide Etch (BOE) and ammonium sulfide, and their effect on the quality of ZnS passivation. These treatments are compared using Capacitance-Voltage measurement of metal-insulator-semiconductors structures made from the treated GaSb.