An overview of recent power semiconductor devices and their simulation

L. Hernández, A. Claudio, M. Cotorogea, J. Macedonio
{"title":"An overview of recent power semiconductor devices and their simulation","authors":"L. Hernández, A. Claudio, M. Cotorogea, J. Macedonio","doi":"10.1109/CIEP.2006.312152","DOIUrl":null,"url":null,"abstract":"Currently, power electronics designers ask for more precise power semiconductor device models. Models based on semiconductor physics offer a better option to accomplish these requirements. Other aspect is the availability of parameter extraction methods which frequently is complicated. This paper proposes a study of parameter extraction methods for semiconductor device models. From this analysis an automatic system for semiconductor devices characterization of parameter extraction is proposed","PeriodicalId":131301,"journal":{"name":"2006 IEEE International Power Electronics Congress","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Power Electronics Congress","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIEP.2006.312152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Currently, power electronics designers ask for more precise power semiconductor device models. Models based on semiconductor physics offer a better option to accomplish these requirements. Other aspect is the availability of parameter extraction methods which frequently is complicated. This paper proposes a study of parameter extraction methods for semiconductor device models. From this analysis an automatic system for semiconductor devices characterization of parameter extraction is proposed
概述最近的功率半导体器件及其仿真
目前,电力电子设计人员要求更精确的功率半导体器件模型。基于半导体物理的模型为实现这些要求提供了更好的选择。另一个方面是参数提取方法的可用性,这往往是复杂的。本文研究了半导体器件模型的参数提取方法。在此基础上,提出了一种用于半导体器件表征参数提取的自动化系统
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信