A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology

Abstract

This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 µm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.