Challenges in gate level modeling for delay and SI at 65nm and below

Igor Keller, K. Tam, Vinod Kariat
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引用次数: 28

Abstract

In this paper we review the prior art and recent advances in the area of standard cell modeling for delay and noise analyses, suggest a taxonomy of different cell models, and discuss their strengths and weaknesses. We also discuss challenges in cell modeling for delay and noise analyses arising in new submicron process nodes.
65nm及以下的延迟和SI栅极级建模的挑战
在本文中,我们回顾了延迟和噪声分析标准细胞模型领域的现有技术和最新进展,提出了不同细胞模型的分类,并讨论了它们的优缺点。我们还讨论了在新的亚微米工艺节点中产生的延迟和噪声分析的细胞建模中的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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