Design of Broadband Low-Noise Amplifier in 45-nm SOI Technology

Abstract

This paper presents a 28–38 GHz wideband low-noise amplifier (LNA) with minimum noise figure of 2.8 dB. The amplifier consists of a two-stage cascade design. By using a transformer circuit as its matching network, the LNA achieved a wideband performance. The LNA was designed in 45 nm CMOS SOI technology, achieving a maximum voltage gain of 20 dB and a maximum power gain of 23 dB with a 3dB bandwidth of 28–38 GHz, and a noise figure less than 3.8 dB in the band. At a supply voltage of 1.5V, the DC power consumption was only 20 mW.