Scaling Beyond 7nm: Design-Technology Co-optimization at the Rescue

J. Ryckaert
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引用次数: 2

Abstract

At 7nm and beyond, designers need to support scaling by identifying the most optimal patterning schemes for their designs. Moreover, designers can actively help by exploring scaling options that do not necessarily require aggressive pitch scaling. In this talk we will illustrate how design technology co-optimization can help achieving the expected Moore's law scaling; how optimizing device performance can lead to smaller standard cells; how the metal interconnect stack needs to be adjusted for unidirectional metals and how a vertical transistor can shift design paradigms. This paper demonstrates that scaling has become a joint design-technology co-optimization effort between process technology and design specialists, that expands way beyond just patterning enabled dimensional scaling.
7nm以上的扩展:设计-技术协同优化在救援
在7nm及以上,设计人员需要通过为他们的设计确定最优的模式方案来支持缩放。此外,设计师可以通过探索不一定需要积极缩放的缩放选项来积极地提供帮助。在本次演讲中,我们将阐述设计技术协同优化如何帮助实现预期的摩尔定律缩放;如何优化设备性能可以导致更小的标准电池;如何调整单向金属的金属互连堆栈,以及垂直晶体管如何改变设计范式。本文表明,缩放已经成为工艺技术和设计专家之间的联合设计-技术协同优化努力,这远远超出了图形化实现的尺寸缩放。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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