Resistive Switching in Sputtered ZnO/IGZO Heterostructure Memristor

Abstract

Owing to the reversible resistive switching behavior, memristor possesses great potential in non-volatile memory application. In this work, we proposed a ZnO/IGZO heterostructure based memristor, which shows a typical bipolar resistive switching behavior under different compliance current and a high HRS/LRS ratio of 108, rendering it suitable for nonvolatile memory. Space-Charge-Limited Conduction (SCLC) mechanism is found suitable for understanding the current conduction while the diffusion of oxygen vacancies between the two dielectric layers leads to the resistive switching behavior.