PoLibSi: Path Towards Intrinsically Reconfigurable Components

J. Nevoral, Václav Simek, R. Ruzicka
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引用次数: 2

Abstract

One of the main research directions of polymorphic electronics is focused on various issues connected with the design of basic polymorphic components - polymorphic gates. Without a sufficient amount of polymorphic gates offering good properties, conventional electronics will be most likely the preferred way before polymorphic electronics in application scenarios targeting multifunctional behaviour or reconfiguration. The main objective of this paper is to propose a library called PoLibSi which contains eight sets of efficient bi-functional two-input polymorphic gates, whose function is selected by mutual polarity of dedicated power rails. The gate sets differ in the transistor type (conventional MOSFET, emerging double-gate ambipolar transistors), feature the gate sets were optimized to (transistor count, delay, power consumption) and input impedance constraint. The individual gates were designed by means of using an evolutionary based approach and further validated by HSPICE simulations. Each gate implementation includes a schematic, HSPICE description and simulation results. Moreover, propagation delay and power consumption is provided for all MOSFET based gates. Furthermore, each gate set is complete - it provides efficient implementation of any pair of two-input Boolean functions. Besides providing polymorphic gates with better properties to the research society, the aim of the proposed library is to improve the synthesis of polymorphic circuits in terms of the resulting size, as it is also shown in the paper. Finally, the PoLibSi library is available at: www.fit.vutbr.cz/~inevoral/polibsi
PoLibSi:通向内在可重构组件的道路
多态电子学的主要研究方向之一是关注与基本多态元件设计相关的各种问题——多态门。如果没有足够数量的多态门提供良好的性能,传统电子学很可能是多态电子学在针对多功能行为或重新配置的应用场景之前的首选方法。本文的主要目标是提出一个名为PoLibSi的库,其中包含八组高效的双功能双输入多态门,其功能由专用电源轨的互极性选择。栅极组在晶体管类型(传统的MOSFET,新兴的双栅双极晶体管)上有所不同,栅极组的特征是优化(晶体管数量,延迟,功耗)和输入阻抗约束。采用基于进化的方法设计了各个门,并通过HSPICE仿真进一步验证。每个门的实现包括原理图、HSPICE描述和仿真结果。此外,所有基于MOSFET的栅极都提供了传输延迟和功耗。此外,每个门集是完整的-它提供了任何一对双输入布尔函数的有效实现。除了为研究界提供性能更好的多晶闸管外,所提出的库的目的是在生成的尺寸方面改进多晶电路的合成,这一点在论文中也有所体现。最后,PoLibSi库可以在:www.fit.vutbr.cz/~inevoral/polibsi上获得
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