V. Tran, S. Chakraborty, Leigh E. Milner, S. Mahon, M. Heimlich
{"title":"A 39 GHz Power Amplifier in 0.15 μm GaN","authors":"V. Tran, S. Chakraborty, Leigh E. Milner, S. Mahon, M. Heimlich","doi":"10.1109/AMS48904.2020.9059531","DOIUrl":null,"url":null,"abstract":"In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 4th Australian Microwave Symposium (AMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AMS48904.2020.9059531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.