A 39 GHz Power Amplifier in 0.15 μm GaN

V. Tran, S. Chakraborty, Leigh E. Milner, S. Mahon, M. Heimlich
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Abstract

In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.
0.15 μm GaN的39 GHz功率放大器
本文介绍了一种采用WIN半导体最新推出的0.15 μm GaN HEMT工艺实现的39ghz功率放大器。还显示了4×100栅极宽度晶体管在39 GHz功率下的负载-拉力模拟。电磁仿真结果表明,该两级放大器在39 GHz时的功率增益为17 dB, PAE为21%,饱和输出功率为31 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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