Intel 22nm Low-Power FinFET (22FFL) Process Technology for 5G and Beyond

Hyung-Jin Lee, Steven Callender, S. Rami, W. Shin, Q. Yu, J. Marulanda
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引用次数: 13

Abstract

Intel's 22FFL is the comprehensive FinFET technology offering the best-in-class RF transistors achieving $f_{t}$ and $f_{max}$ above 300GHz and 450GHz, respectively. The addition of a high-power RF device (HyPowerFF) and enhanced mmWave BEOL support the opportunity to push silicon technology beyond the 5G era.
英特尔22nm低功耗FinFET (22FFL)工艺技术,用于5G及以后
英特尔的22FFL是全面的FinFET技术,提供同类最佳的射频晶体管,分别达到300GHz和450GHz以上的$f_{t}$和$f_{max}$。高功率射频器件(HyPowerFF)的增加和增强的毫米波BEOL支持将硅技术推向5G时代之外的机会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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