{"title":"A Single-Stage, High-Efficiency Bulk-Biased CMOS Rectifier for Wireless Bioelectronic Power Transfer Applications","authors":"Christian Miguel Pama, Angelito A. Silverio","doi":"10.1109/TENSYMP55890.2023.10223655","DOIUrl":null,"url":null,"abstract":"This paper presents a CMOS rectifier for wireless power transfer (WPT) applications. The study implements independent bulk control circuits on each switching transistor and utilized parasitic PN junctions to compensate for the threshold voltage (VTH) drop during the on-state of the transistor and adjust it accordingly during the off-state to reduce the leakage current of the transistor. The study achieves a remarkable voltage conversion efficiency (VCE) and power conversion efficiency (PCE) performance even at a low input level. The proposed rectifier circuit was designed and simulated in a 0.18 µm CMOS process and achieved a peak PCE of 92.96% and VCE of 90.50%.","PeriodicalId":314726,"journal":{"name":"2023 IEEE Region 10 Symposium (TENSYMP)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Region 10 Symposium (TENSYMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENSYMP55890.2023.10223655","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a CMOS rectifier for wireless power transfer (WPT) applications. The study implements independent bulk control circuits on each switching transistor and utilized parasitic PN junctions to compensate for the threshold voltage (VTH) drop during the on-state of the transistor and adjust it accordingly during the off-state to reduce the leakage current of the transistor. The study achieves a remarkable voltage conversion efficiency (VCE) and power conversion efficiency (PCE) performance even at a low input level. The proposed rectifier circuit was designed and simulated in a 0.18 µm CMOS process and achieved a peak PCE of 92.96% and VCE of 90.50%.