A built-in self-repair method for RAMs in mesh-based NoCs

Hsiang-Ning Liu, Yu-Jen Huang, Jin-Fu Li
{"title":"A built-in self-repair method for RAMs in mesh-based NoCs","authors":"Hsiang-Ning Liu, Yu-Jen Huang, Jin-Fu Li","doi":"10.1109/VDAT.2009.5158144","DOIUrl":null,"url":null,"abstract":"Network-on-chip is one popular interconnection infrastructure for giga-scale integrated chips. Moreover, the number of memory cores in such chips usually is very large. This paper proposes an efficient built-in self-repair (BISR) method for repairing memories in NoCs. By reusing the communication links in NoCs, the BISR scheme can repair multiple memories using one BISR circuit without incurring the problem of routing. To increase the repair efficiency, a global spare memory is designed for repairing multiple memories. Experimental results show that the proposed BISR scheme can achieve very high repair efficiency. Also, the area overhead of the BISR circuit is very low—only about 1.38% for fifteen 8K×64-bit memories.","PeriodicalId":246670,"journal":{"name":"2009 International Symposium on VLSI Design, Automation and Test","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Design, Automation and Test","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2009.5158144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Network-on-chip is one popular interconnection infrastructure for giga-scale integrated chips. Moreover, the number of memory cores in such chips usually is very large. This paper proposes an efficient built-in self-repair (BISR) method for repairing memories in NoCs. By reusing the communication links in NoCs, the BISR scheme can repair multiple memories using one BISR circuit without incurring the problem of routing. To increase the repair efficiency, a global spare memory is designed for repairing multiple memories. Experimental results show that the proposed BISR scheme can achieve very high repair efficiency. Also, the area overhead of the BISR circuit is very low—only about 1.38% for fifteen 8K×64-bit memories.
网格noc中ram的内置自修复方法
片上网络是一种流行的千兆级集成芯片互连基础设施。此外,这种芯片中的存储核心数量通常非常大。本文提出了一种有效的内置自修复(BISR)方法来修复noc中的存储器。通过复用noc中的通信链路,BISR方案可以使用一个BISR电路修复多个存储器,而不会产生路由问题。为了提高修复效率,设计了一个全局备用内存来修复多个内存。实验结果表明,该方案具有很高的修复效率。此外,BISR电路的面积开销非常低,仅为15个8K×64-bit存储器的1.38%左右。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信