A 4 Mb 5 V-only flash EEPROM with sector erase

Digest of Technical Papers., 1990 Symposium on VLSI Circuits Pub Date : 1990-06-07 DOI:10.1109/VLSIC.1990.111116

H. Stiegler, B. Ashmore, R. Bussey, M. Gill, S. Lin, M. McConnell, D. McElroy, J. Schreck, P. Shah, P. Truong, A. Esquivel, J. Paterson, B. Riemenschneider

引用次数: 5

Abstract

A full 4-Mb flash EEPROM was fabricated in 0.8-μm CMOS and its functionality was verified. Conservative 1.0-μm features were used in the periphery, resulting in a die area of 95 mm2. The device features 5-V-only operation and either full-chip or sector erase. A segmented architecture, remote row decode, and innovative design techniques provide the sector erase feature and high-voltage handling with improved breakdown protection and isolation

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具有扇区擦除功能的4mb 5v -only闪存EEPROM

在0.8 μ m CMOS上制作了一个完整的4mb闪存EEPROM，并对其功能进行了验证。外围采用保守的1.0-μm特征，导致模具面积为95 mm2。该器件具有仅5v操作和全芯片或扇区擦除功能。分段架构、远程行解码和创新的设计技术提供了扇区擦除功能和高压处理，并改进了击穿保护和隔离

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Technical Papers., 1990 Symposium on VLSI Circuits

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