Integrated Class C-VCO — Mixer for 2.45 GHz transmitter in 180nm CMOS technology

P. Shasidharan, H. Ramiah, J. Rajendran
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引用次数: 2

Abstract

This paper presents on the Up-conversion mixer and Class-C CMOS LC VCO which operates at 2.45 GHz designed using 180 nm CMOS RF Technology. Voltage Controlled Oscillator, VCO combined with mixer design and achieves phase noise of −119 dBc/Hz and −131 dBc/Hz at 1 MHz and 3 MHz offset respectively. The system consumes 2.04 mW from 1.2 V supply. The measured Figure of Merit (FoM) reaches 182.08 dBc/Hz at 1 MHz offset. The passive mixer recorded third-order input intercept point (IIP3) of 13.28 dBm and 1-dB compression point (P1dB) of 5.17 dBm. This mixer design generates a stable matching at −23.91 dB and achieves a good port to port isolation of −61 dB.
集成类C-VCO混频器2.45 GHz发射机在180nm CMOS技术
本文介绍了采用180nm CMOS射频技术设计的上变频混频器和工作频率为2.45 GHz的c类CMOS LC压控振荡器。压控振荡器(VCO)与混频器设计相结合,在1mhz和3mhz偏移量下分别实现了- 119 dBc/Hz和- 131 dBc/Hz的相位噪声。系统从1.2 V电源消耗2.04 mW。在1mhz偏移时,测量到的性能因数(FoM)达到182.08 dBc/Hz。无源混频器记录的三阶输入截距点(IIP3)为13.28 dBm, 1 db压缩点(P1dB)为5.17 dBm。该混频器设计在−23.91 dB产生稳定的匹配,并实现−61 dB的良好端口到端口隔离。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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