Comparative Analysis of Various Design Implementations of CLA Carry Chains

Naga Spandana Muppaneni, Steve C. Chiu, V. Kantabutra, Farshad Dailami
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Abstract

This paper presents a comparative research of Carry Lookahead Adder (CLA) carry chains of various design implementations, in terms of propagation delay and transistor count. Two different design implementations of CLA carry generation circuit are discussed and compared based on their speed and transistor count. The representative designs compared are Complementary Metal Oxide Semiconductor (CMOS) Conventional CLA (CCLA) carry generation structure and proposed structure of CLA carry generation, named VpAn. To yield optimized delay for the proposed VpAn Design, transistor resizing has been done. A comprehensive comparison and analysis of performance of four, eight and sixteen bit carry chains are carried out. All the schematics of the CLA carry chains are designed using 0.25um process. The simulations of the schematics of CMOS conventional CLA generation circuits and the proposed CLA carry generation designs are performed using LTspice based on 250nm CMOS technology and 2.5V supply voltage to yield realistic rise and fall times. The speed of each circuit is evaluated and our proposed model reduces the propagation delay by 75% compared to the results of CCLA before sizing. This paper establishes, how the physical implementation of circuits relate to their performance.
CLA承载链各种设计实现的比较分析
本文从传输延迟和晶体管数两个方面对不同设计实现的进位前瞻加法器(CLA)进位链进行了比较研究。讨论并比较了两种不同的CLA进位产生电路的设计实现,并对其速度和晶体管数进行了比较。比较的代表性设计有互补金属氧化物半导体(CMOS)、传统CLA (CCLA)载流子发电结构和提出的CLA载流子发电结构VpAn。为了使提出的VpAn设计产生最佳的延迟,已经完成了晶体管尺寸的调整。对4位、8位和16位进位链的性能进行了全面的比较和分析。CLA承载链的所有原理图均采用0.25um工艺设计。利用LTspice基于250nm CMOS技术和2.5V电源电压,对CMOS传统CLA产生电路原理图和所提出的CLA载流产生设计进行了仿真,得到了真实的上升和下降时间。对每个电路的速度进行了评估,与CCLA的结果相比,我们提出的模型将传播延迟降低了75%。本文建立了电路的物理实现与它们的性能之间的关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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