{"title":"Parameter determination techniques for the Gummel-Poon CAD transistor model","authors":"J. Bowers, N. English, H. Nienhaus","doi":"10.1109/PESC.1980.7089436","DOIUrl":null,"url":null,"abstract":"This paper describes in detail all of the measurements and techniques necessary to accurately determine the parameters required for the large signal, Gummel-Poon CAD transistor model. The model is accurate for static and dynamic simulations in low and high power applications.","PeriodicalId":227481,"journal":{"name":"1980 IEEE Power Electronics Specialists Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1980.7089436","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper describes in detail all of the measurements and techniques necessary to accurately determine the parameters required for the large signal, Gummel-Poon CAD transistor model. The model is accurate for static and dynamic simulations in low and high power applications.