A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications

2012 42nd European Microwave Conference Pub Date : 2012-10-01 DOI:10.23919/EUMC.2012.6459166

O. Jardel, M. Olivier, D. Lancereau, R. Aubry, E. Chartier, N. Sarazin, M. di Forte Poisson, S. Piotrowicz, M. Stanislawiak, D. Rimbert, S. Delage, P. Eudeline

引用次数: 11

Abstract

This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with ~20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34W, 50% PAE with ~20.5 dB power gain in the [2.9 - 3.5GHz] frequency band, in pulsed conditions (50μs/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.

查看原文本刊更多论文

30W, 46% PAE s波段GaN HEMT MMIC功率放大器，用于雷达应用

研究了s波段雷达用30w GaN HEMT MMIC功率放大器的性能。这些放大器在脉冲条件(50μs/10%)下，在[2.7 - 3.7 GHz]频段提供30w、46% PAE和~20 dB功率增益，在[2.9 - 3.5GHz]频段提供34W、50% PAE和~20.5 dB功率增益。介绍了器件的工艺和晶体管的性能，以及放大器的设计和特性。为了评估它们在雷达波形约束下的性能，还进行了脉冲对脉冲的稳定性测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2012 42nd European Microwave Conference

自引率

0.00%

发文量