Electrical, dielectric and structural properties of MgO thin films deposited on single layer ZnO using chemical solution method

Z. Habibah, N. Syafawati, L. N. Ismail, R. A. Bakar, M. H. Mamat, M. Rusop
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Abstract

The electrical, dielectric and structural properties of multilayer ZnO/MgO films prepared by simple chemical deposition technique were investigated using I-V measurement, impedance spectroscopy analyzer and field emission scanning electron microscope (FESEM). From the observation, it shows that the annealing temperature influence the electrical, dielectric and structural properties of ZnO/MgO multilayer films. Denser films and small particles are produced as the annealing temperature increase from 400°C to 500°C with 25°C interval.
化学溶液法沉积单层ZnO上MgO薄膜的电学、介电和结构性能
采用I-V测量、阻抗谱分析仪和场发射扫描电镜(FESEM)研究了简单化学沉积法制备的多层ZnO/MgO薄膜的电学、介电和结构性能。结果表明,退火温度对ZnO/MgO多层膜的电学性能、介电性能和结构性能均有影响。退火温度从400℃升高到500℃,间隔25℃,薄膜致密,颗粒小。
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