Z. Habibah, N. Syafawati, L. N. Ismail, R. A. Bakar, M. H. Mamat, M. Rusop
{"title":"Electrical, dielectric and structural properties of MgO thin films deposited on single layer ZnO using chemical solution method","authors":"Z. Habibah, N. Syafawati, L. N. Ismail, R. A. Bakar, M. H. Mamat, M. Rusop","doi":"10.1109/SHUSER.2012.6268883","DOIUrl":null,"url":null,"abstract":"The electrical, dielectric and structural properties of multilayer ZnO/MgO films prepared by simple chemical deposition technique were investigated using I-V measurement, impedance spectroscopy analyzer and field emission scanning electron microscope (FESEM). From the observation, it shows that the annealing temperature influence the electrical, dielectric and structural properties of ZnO/MgO multilayer films. Denser films and small particles are produced as the annealing temperature increase from 400°C to 500°C with 25°C interval.","PeriodicalId":426671,"journal":{"name":"2012 IEEE Symposium on Humanities, Science and Engineering Research","volume":"106 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Symposium on Humanities, Science and Engineering Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SHUSER.2012.6268883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The electrical, dielectric and structural properties of multilayer ZnO/MgO films prepared by simple chemical deposition technique were investigated using I-V measurement, impedance spectroscopy analyzer and field emission scanning electron microscope (FESEM). From the observation, it shows that the annealing temperature influence the electrical, dielectric and structural properties of ZnO/MgO multilayer films. Denser films and small particles are produced as the annealing temperature increase from 400°C to 500°C with 25°C interval.