Ferromagnetic resonance study of Si/NiO/NiFe films with different orientations of NiO buffer layers

Abstract

Magnetic thin films have been found wide use in a large scale of microwave devices that include circulators, filters, and phase shifters [1, 2]. The operating frequencies of these devices are determined essentially by the ferromagnetic resonance (FMR) frequencies of the films. Recently, many efforts are made on the FMR study for the metallic magnetic films, such as NiFe/NiO [3], NiFe/ FeMn [4, 5] CoNi/FeMn [6], NiFe/CoO [7] and IrMn/Fe/IrMn [8] films. However, there are few reports on the effects of antiferromagnetic (AF) film with different orientations on the FMR effect. This presentation will demonstrate the influence of different orientations of NiO buffer layers on the ferromagnetic resonance (FMR) effect of Si/NiO/NiFe films. It is important to emphasize that this work differs from previous work on the FMR study of NiFe films. Previous work was only just performed on single layer NiFe film or antiferromagnetic/NiFe films, where the antiferromagnetic films didn't refer to the orientation. However, compared with the previous work, the NiO antiferro-magnetic films have different orientations in this work. It is that the different orientations of NiO buffer layers lead to diverse FMR effects.