3-bit read scheme for single layer Ta2O5 ReRAM

A. Schonhals, R. Waser, S. Menzel, V. Rana
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引用次数: 4

Abstract

Complementary switching mechanism allows for distinguishing between different physical orientations of the conductive filament. In addition to the multilevel capability of single layer Ta2O5 devices, 3-bit information can also be stored and read in a single device. In this report, we present a novel read scheme, allowing for distinguishing 8 different states only by using 4 different resistive states with the pulse measurements. Variability and cycle-to-cycle stability of the single layer Ta2O5 complementary switching are also discussed in details.
单层Ta2O5 ReRAM的3位读方案
互补开关机构允许区分导电灯丝的不同物理方向。除了单层Ta2O5器件的多电平能力外,还可以在单个器件中存储和读取3位信息。在本报告中,我们提出了一种新的读取方案,允许仅通过使用4种不同的电阻状态与脉冲测量来区分8种不同的状态。本文还详细讨论了单层Ta2O5互补开关的可变性和周期间稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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