{"title":"A CMOS Switchable Diode-Feeding Rectifier with Load Modulation for Wireless Power Range Extension","authors":"Chun-An Lu, Po-Hsun Chu, Y. Liao","doi":"10.23919/apmc55665.2022.9999829","DOIUrl":null,"url":null,"abstract":"This work presents a wide-input-range diode-feeding rectifier to achieve a stable and high-efficiency power supply. By changing the number of diodes, the rectifying transistors are biased to achieve optimal power conversion efficiency over a wide input power range. Furthermore, the load modulator for balancing power between the input and output of the rectifier is implemented using a switched-capacitor circuit. The chip was fabricated in a 180 nm CMOS process. The measured peak efficiency of the proposed RF power management circuit is 48% at a load of $22 \\mathrm{k}\\Omega$, and the high-efficiency range $(\\mathbf{efficiency} > 20\\%)$ is approximately 15 dB. The sensitivity at an open load is −14 dBm at an output voltage of 1 V. With load modulation, the efficiency improves by about 11% at a low load current.","PeriodicalId":219307,"journal":{"name":"2022 Asia-Pacific Microwave Conference (APMC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Asia-Pacific Microwave Conference (APMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/apmc55665.2022.9999829","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents a wide-input-range diode-feeding rectifier to achieve a stable and high-efficiency power supply. By changing the number of diodes, the rectifying transistors are biased to achieve optimal power conversion efficiency over a wide input power range. Furthermore, the load modulator for balancing power between the input and output of the rectifier is implemented using a switched-capacitor circuit. The chip was fabricated in a 180 nm CMOS process. The measured peak efficiency of the proposed RF power management circuit is 48% at a load of $22 \mathrm{k}\Omega$, and the high-efficiency range $(\mathbf{efficiency} > 20\%)$ is approximately 15 dB. The sensitivity at an open load is −14 dBm at an output voltage of 1 V. With load modulation, the efficiency improves by about 11% at a low load current.