Two-step preparation and properties of polyimide / zirconium composite free-supporting membrane

Renchen Liu, Jingrui Lu
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Abstract

To discuss the preparation technology of ultra-thin Polyimide (PI)/ Zirconium (Zr) self-standing composite film. Polyamide acid (PAA) solution was synthesized with 4,4'- diaminodiphenyl ether (ODA) and pyromellitic dianhydride (PMDA) as monomers. PI films were obtained by gradient temperature rise thermal imidization. A PI self-supporting film with a thickness of about 600 nm was obtained by the corrosion of ZnO release agent with dilute hydrochloric acid. After it was fixed in a copper frame with a diameter of 15 mm, a Zr film with a thickness of about 200 nm was deposited on it by direct-current magnetron sputtering. The composite film with a thickness of about 600 nm PI/200 nm Zr was obtained. PI film increased the mechanical properties of self-supporting Zr filter film, but in order to reduce the influence of PI film on the transmittance of Zr filter film, PI film was etched and thinned by excimer laser, and the thickness of 200 nm PI/ 200 nm Zr self-supporting filter film was prepared. This method deposited 200 nm Zr film on 600 nm self-supporting PI film, and then etched part of the PI film. 160 pulses were etched with excimer laser energy density of 40 mJ/cm2 and 26 pulses were etched with 70 mJ / cm2, and 200 nm PI /200 nm Zr self-supporting composite filter film was acquired respectively.
聚酰亚胺/锆复合自由支撑膜的两步制备及性能研究
探讨超薄聚酰亚胺(PI)/锆(Zr)自立复合薄膜的制备工艺。以4,4′-二氨基二苯醚(ODA)和焦二甲基二酐(PMDA)为单体合成了聚酰胺(PAA)溶液。采用梯度升温热亚酰化法制备PI膜。用稀盐酸对ZnO脱模剂进行腐蚀,得到了厚度约为600 nm的PI自支撑膜。将其固定在直径为15 mm的铜框架中,通过直流磁控溅射在其上沉积约200 nm厚度的Zr薄膜。得到了厚度约为600 nm PI/200 nm Zr的复合薄膜。PI膜提高了自支撑Zr滤膜的力学性能,但为了降低PI膜对Zr滤膜透光率的影响,采用准分子激光对PI膜进行蚀刻减薄,制备了厚度为200 nm PI/ 200 nm Zr的自支撑滤膜。该方法在600 nm的自支撑PI膜上沉积200 nm的Zr膜,然后蚀刻部分PI膜。用准分子激光能量密度为40 mJ/cm2刻蚀160个脉冲,用70 mJ/cm2刻蚀26个脉冲,分别获得了200 nm PI /200 nm Zr自支撑复合滤光膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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