Raman spectroscopy of Si/sub x/Ge/sub 1-x/ compositional and temperature dependence

Abstract

Raman spectroscopy is employed to study the compositional and temperature dependence of optical phonon modes in Si/sub x/Ge/sub 1-x/(0.0037/spl les/./spl times//spl les/1) alloy. Czochralski grown samples are doped in the range from nominally undoped to heavily boron doped, with the highest concentration of free holes of 10/sup 20/ cm/sup -3/. Three observed bands can be attributed to local Si-Si, Ge-Ge and Si-Ge vibrational modes. We present compositional dependence and temperature shift of the Si-Si band.