A SiGe HEMT Mixer IC with Low Conversion Loss

Abstract

The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1 ¿m gate length transistor technology. The design is based on a new large-signal simulation model developed for the SiGe HEMT. Good agreement between simulation and measurement is reached. The mixer exhibits 4.0dB and 4.7dB conversion loss when down-converting 3.0GHz and 6.0GHz signals, respectively, to an intermediate frequency of 500MHz using high-side injection of 5dBm local oscillator power. Conversion loss is less than 8dB for RF frequencies up to 10GHz with a mixer linearity of ¿8.8dBm input related 1dB compression point.