Millimetre band detectors based on GaN/AlGaN HEMT

Abstract

We report on experimental studies of resonant and non-resonant detection on GaN/AlGaN high electron mobility transistors in the millimeter-wave band at room temperate. The implementation of detectors strongly correlated with designed planar antennas, that ensure THz radiation coupling. In the present work, we study bow-tie and the dual-dipole detectors, for which responsivity of non-resonant detection shows maximums at 170 GHz (1380 V/W) and 175 GHz (630 V/W), respectively. We observe wide bandwidth ∼ 40 GHz around 183 GHz and demonstrate a response in the range 780 GHz–805 GHz with the maximum at 796 GHz (1250 V/W) for bow-tie detector.