Harmonic generation in transfer electron GaN diodes with impact ionization

Abstract

Impact ionization in GaN diodes have been considered. The reference compounds are perspective for fabricating of centimeter and millimeter wave range transferred electron devices operating at input ionization conditions (electric field above 3 or 5 times of the threshold field and efficiency of 11...13 % ) have been shown. The value of GaN transfer electron devices oscillation efficiency to be obtained at harmonic operation has been demonstrated.