A compact pulse-based charge pump in 0.13 μm CMOS

Abstract

In this paper, we present a new class of charge pump capable of generating voltages 3.75 × greater than the supply in a single clock cycle. It occupies .005 mm2 in a 0.13 μm CMOS process and can operate with a supply voltage between 0.4 V and 1.2 V, or as low as 0.2 V with some pulse-shape distortion. Our charge pump can provide output voltages of up to 3.9 V with less than 10 nW of standby power dissipation.