Y. Liu, Chuan-ren Yang, Jihua Zhang, Song Wu, Hongwei Chen
{"title":"The two dimensional eelectron gas in BST/Al0.3Ga0.7N/GaN double heterostructure","authors":"Y. Liu, Chuan-ren Yang, Jihua Zhang, Song Wu, Hongwei Chen","doi":"10.1109/ASEMD.2009.5306665","DOIUrl":null,"url":null,"abstract":"In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/ Al<inf>0.3</inf>Ga<inf>0.7</inf>N /GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al<inf>0.3</inf>Ga<inf>0.7</inf>N/GaN double heterostructure conduction band and the two-dimensional electron gas(2DEG) density are investigated. The results indicate that the 2DEG density of BST/Al<inf>0.3</inf>Ga<inf>0.7</inf>N/GaN is larger than that of Al<inf>0.3</inf>Ga<inf>0.7</inf>N/GaN, for a 8nm BST on AlGaN/GaN structure, the 2DEG density reached 1.85×10<sup>13</sup> cm<sup>−2</sup>, which is 23% higher than that of AlGaN/GaN structure.","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"273 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASEMD.2009.5306665","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/ Al0.3Ga0.7N /GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al0.3Ga0.7N/GaN double heterostructure conduction band and the two-dimensional electron gas(2DEG) density are investigated. The results indicate that the 2DEG density of BST/Al0.3Ga0.7N/GaN is larger than that of Al0.3Ga0.7N/GaN, for a 8nm BST on AlGaN/GaN structure, the 2DEG density reached 1.85×1013 cm−2, which is 23% higher than that of AlGaN/GaN structure.