Theoretical Study of a 1.94 THz RTD-gHEMT Oscillator Towards THz Communications

Abstract

Suitable power levels remain constant challenges in terahertz (THz) communications. This work analytically investigates a 1.94 THz resonant tunneling diode-gated high-electron mobility transistor (RTD-gHEMT)-based oscillator along with a graphene antenna for future 6G wireless networks. We obtain the negative conductance of a distributed circuit model from experimental results of an InGaAs/AlAs RTD oscillator. Analytical results show the device notably achieves an output power up to 14 mW (∼11.5 dBm) whilst operating at frequencies as high as 1.94 THz. Furthermore, the RTD-gHEMT device has a 37.4 nm gate length, which renders a substantial decrease in the system form factor. These unique features place the device as part of potential solutions for generation and transmission of THz signals in 6G networks.