Power Losses Evalutation of Hybrid Semiconductor Modules for Photovoltaic Inverters

Abstract

String inverters are usually based on Silicon (Si) IGBT, which leads to limited switching frequency and power density. In this scenario, silicon carbide (SiC) MOSFET could be an interesting solution. Nevertheless, the SiC-MOSFET is quite expensive for devices with a high current rating. In this context, this work investigates the potential of power losses reduction provided by hybrid power modules in PV inverters. The hybrid power module is based on the parallel connection of a Si-IGBT and a SiC-MOSFET. This approach reduces the switching losses of Si-IGBT systems since the IGBT reaches soft switching. Also, this approach employs a lower SiC area than the full-SiC solution. The losses for the Si-IGBT and hybrid switch are obtained from double-pulse test LTSPICE simulations and compared.