Single electron tunneling technology for neural networks

Abstract

A new neural network hardware concept based on single electron tunneling is presented. Single electron tunneling transistors have some advantageous properties which make them very attractive to make neural networks, among which their very small size, extremely low power consumption and potentially high speed. After a brief description of the technology, the relevant properties of SET transistors are described. Simulations have been performed on some small circuits of SET transistors that exhibit functional properties similar to those required for neural networks. Finally, interconnecting the building blocks to form a neural network is analyzed.